K3175A 查看數據表（PDF） - Hitachi -> Renesas Electronics
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K3175A Datasheet PDF : 8 Pages
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2SK3175A
Absolute Maximum Ratings
(Ta = 25°C)
Item
Symbol
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Channel dissipation
V Note1
DSS
V
GSS
ID
I
Note2
D(pulse)
Pch Note3
Channel temperature
Tch
Storage temperature
Tstg
Note:
1. Pin = 0 , PW ≤ 0.1 sec
2. PW ≤ 10 ms, duty cycle ≤ 50 %
3. Value at Tc = 25°C
Ratings
Unit
60
V
±10
V
8
A
16
A
126
W
175
°C
–55 to +150
°C
Electrical Characteristics
(Tc = 25°C)
Item
Symbol Min Typ Max Unit Test Conditions
Zero gate voltage drain current
IDSS
—
—
1
mA
VDS = 60 V, VGS = 0
Gate to source leak current
IGSS
—
—
±3
µA
VGS = ±10V, VDS = 0
Gate to source cutoff voltage
Forward transfer admittance
VGS(off)
1.0
2.2
3.0
V
|y | 4.0
6.7
—
S
fs
ID = 1mA, VDS = 10V
VDS=10V,
I
D
=
5A
Note4
Input capacitance
Ciss
—
165 —
pF
VGS = 5V, VDS = 0
f = 1MHz
Reverse transfer capacitance
Crss
—
4
—
pF
VDG = 10V, VGS = 0
f = 1MHz
Output Power
Pout
100
135
—
W
VDS = 28V, IDQ = 0.6A
f = 860 MHz
Pin = 7 W
Drain Rational
ηD
—
65
—
%
VDS = 28V, IDQ = 0.6A
f = 860 MHz
Pin = 7 W
Note: 4. Pulse Test
Rev.0, Aug. 2001, page 2 of 8
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