K3177 查看數據表（PDF） - Hitachi -> Renesas Electronics

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K3177

Silicon N Channel MOS FET High Speed Power Switching

Hitachi -> Renesas Electronics 

2SK3177

Absolute Maximum Ratings (Ta = 25°C)

Item

Symbol

Drain to source voltage

Gate to source voltage

Drain current

Drain peak current

Body-drain diode reverse drain current

Avalanche current

Avalanche energy

Channel dissipation

VDSS

VGSS

ID

I Note1

D(pulse)

I DR

I Note3

AP

E Note3

AR

Pch Note2

Channel temperature

Tch

Storage temperature

Tstg

Note:

1. PW ≤ 10 µs, duty cycle ≤ 1%

2. Value at Tc = 25°C

3. Value at Tch = 25°C, Rg ≥ 50 Ω

Electrical Characteristics (Ta = 25°C)

Ratings

Unit

200

V

±20

V

15

A

60

A

15

A

15

A

15

mJ

35

W

150

°C

–55 to +150

°C

Item

Symbol Min

Drain to source breakdown voltage V(BR)DSS 200

Gate to source breakdown voltage V(BR)GSS ±20

Gate to source leak current

I GSS

—

Zero gate voltege drain current

I DSS

—

Gate to source cutoff voltage

VGS(off)

1.0

Static drain to source on state

RDS(on)

—

resistance

RDS(on)

—

Forward transfer admittance

|yfs|

16

Input capacitance

Ciss —

Output capacitance

Coss —

Reverse transfer capacitance

Crss —

Turn-on delay time

t d(on)

—

Rise time

tr

—

Turn-off delay time

t d(off)

—

Fall time

tf

—

Body–drain diode forward voltage VDF

—

Body–drain diode reverse

recovery time

t rr

—

Note: 4. Pulse test

Typ Max

—

—

—

—

—

±10

—

10

—

2.5

90

115

95

125

20

—

1600 —

510 —

250 —

20

—

120 —

400 —

170 —

0.85 —

100 —

Unit

V

V

µA

µA

V

mΩ

mΩ

S

pF

pF

pF

ns

ns

ns

ns

V

ns

Test Conditions

ID = 10 mA, VGS = 0

IG = ±100 µA, VDS = 0

VGS = ±16 V, VDS = 0

VDS = 200 V, VGS = 0

ID = 1 mA, VDS = 10 V

ID = 8 A, VGS = 10 VNote4

ID = 8 A, VGS = 4 V Note4

ID = 8 A, VDS = 10 V Note4

VDS = 10 V

VGS = 0

f = 1 MHz

ID = 8 A, VGS = 10 V

RL = 3.75 Ω

IF = 15 A, VGS = 0

IF = 15 A, VGS = 0

diF/ dt = 50 A/ µs

2

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