K3177 查看數據表（PDF） - Hitachi -> Renesas Electronics
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K3177 Datasheet PDF : 9 Pages
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2SK3177
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
5
Pulse Test
4
3
2
I D = 15 A
1
10 A
5A
0
4
8
12 16 20
Gate to Source Voltage V GS (V)
Static Drain to Source on State Resistance
vs. Drain Current
500
Pulse Test
200
VGS = 4 V
100
10 V
50
20
10
12
5 10 20 50 100
Drain Current I D (A)
Static Drain to Source on State Resistance
vs. Temperature
500
Pulse Test
400
300
5, 10 A
15 A
200
V GS = 4 V
5, 10 A
100
15 A
10 V
0
–40
0
40 80 120 160
Case Temperature Tc (°C)
Forward Transfer Admittance vs.
Drain Current
50
25 °C
20
Tc = –25 °C
10
75 °C
5
2
1
0.5
0.1
V DS = 10 V
Pulse Test
0.3 1 3 10 30 100
Drain Current I D (A)
4
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