K3177 查看數據表（PDF） - Hitachi -> Renesas Electronics
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K3177 Datasheet PDF : 9 Pages
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2SK3177
1000
500
Body–Drain Diode Reverse
Recovery Time
di / dt = 50 A / µs
VGS = 0, Ta = 25°C
200
100
50
20
10
0.1 0.3 1 3 10 30 100
Reverse Drain Current I DR (A)
10000
5000
Typical Capacitance vs.
Drain to Source Voltage
2000
Ciss
1000
500
200
Coss
100
Crss
50
20 VGS = 0
f = 1 MHz
10
0
10
20 30 40
50
Drain to Source Voltage V DS (V)
Dynamic Input Characteristics
200
20
160
VDS
120
VGS
16
VDD = 150 V
100 V
50 V
12
80
8
I D = 15 A
40
VDD = 150 V
4
100 V
50 V
0
0
40 80 120 160 200
Gate Charge Qg (nc)
Switching Characteristics
500
300
t d(off)
tf
100
30
tr
t d(on)
10
3
1
0.1 0.3
VGS = 10 V, V DD = 30 V
PW = 5 µs, duty < 1%
1
3 10 30 100
Drain Current I D (A)
5
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