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K3177 查看數據表(PDF) - Renesas Electronics

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K3177 Datasheet PDF : 8 Pages
1 2 3 4 5 6 7 8
2SK3177
Main Characteristics
Power vs. Temperature Derating
40
30
20
10
0
50
100
150
200
Case Temperature TC (°C)
Typical Output Characteristics
50
Pulse Test
10 V
40
6V
4V
3.5 V
30
20
3V
10
VGS =2.5 V
0
2
4
6
8
10
Drain to Source Voltage VDS (V)
Drain to Source Saturation Voltage
vs. Gate to Source Voltage
5
Pulse Test
4
3
2
ID = 15 A
1
10 A
5A
0
4
8
12 16 20
Gate to Source Voltage VGS (V)
Rev.3.00 Sep 07, 2005 page 3 of 7
Maximum Safe Operation Area
100
30
10
3
1
0.3
10 µs
OpeDrCaOtiopPenWraitn=io1n0(Tmcs=(2115s°mhCos)1t)00 µs
this area is
0.1 limited by RDS(on)
0.03
Ta = 25°C
0.01
1 2 5 10 20
50 100 200 500
Drain to Source Voltage VDS (V)
Typical Transfer Characteristics
20
VDS = 10 V
Pulse Test
16
12
8
Tc = 75°C
4
–25°C
25°C
0
1
2
3
4
5
Gate to Source Voltage VGS (V)
Static Drain to Source on State
Resistance vs. Drain Current
500
Pulse Test
200
VGS = 4 V
100
10 V
50
20
10
12
5 10 20 50 100
Drain Current ID (A)

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