K3177 查看數據表（PDF） - Renesas Electronics
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K3177 Datasheet PDF : 8 Pages
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2SK3177
Static Drain to Source on State
Resistance vs. Temperature
500
Pulse Test
400
300
5, 10 A
200
VGS = 4 V
15 A
5, 10 A
100
15 A
10 V
0
–40
0
40 80 120 160
Case Temperature TC (°C)
1000
500
Body to Drain Diode Reverse
Recovery Time
di / dt = 50 A / µs
VGS = 0, Ta = 25°C
200
100
50
20
10
0.1 0.3 1 3
10 30 100
Reverse Drain Current IDR (A)
Dynamic Input Characteristics
200
20
160
VDS
120
VGS
16
VDD = 150 V
100 V
50 V
12
80
8
ID = 15 A
40
VDD = 150 V
4
100 V
50 V
0
0
40 80 120 160 200
Gate Charge Qg (nc)
Forward Transfer Admittance
vs. Drain Current
50
25°C
20
Tc = –25°C
10
75°C
5
2
1
0.5
0.1 0.3 1 3
VDS = 10 V
Pulse Test
10 30 100
Drain Current ID (A)
Typical Capacitance
vs. Drain to Source Voltage
10000
5000
2000
Ciss
1000
500
200
Coss
100
Crss
50
20 VGS = 0
f = 1 MHz
10
0
10 20 30 40
50
Drain to Source Voltage VDS (V)
Switching Characteristics
500
300
tf
100
td(off)
30
tr
td(on)
10
3
1
0.1 0.3
VGS = 10 V, VDD = 30 V
PW = 5 µs, duty < 1 %
1
3 10 30 100
Drain Current ID (A)
Rev.3.00 Sep 07, 2005 page 4 of 7
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