K3209 查看數據表（PDF） - Renesas Electronics

零件编号

产品描述 (功能)

生产厂家

K3209

Silicon N Channel MOS FET High Speed Power Switching

Renesas Electronics 

2SK3209

Silicon N Channel MOS FET

High Speed Power Switching

Features

• Low on-resistance

RDS = 40 mΩ typ.

• High speed switching

• 4 V gate drive device can be driven from 5 V source

Outline

REJ03G1090-0300

(Previous: ADE-208-759A)

Target Specification

Rev.3.00

Sep 07, 2005

RENESAS Package code: PRSS0003AD-A

(Package name: TO-220FM)

D

G

1. Gate

2. Drain

3. Source

12 3

S

Rev.3.00 Sep 07, 2005 page 1 of 3

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