CHA2098B 查看數據表（PDF） - United Monolithic Semiconductors
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CHA2098B Datasheet PDF : 8 Pages
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CHA2098b
20-40GHz High Gain Buffer Amplifier
Electrical Characteristics for Broadband Operation
Tamb = +25°C, Vd1,2,3 = 3.5V
Symbol
Parameter
Fop Operating frequency range (1)
Min Typ Max Unit
20
40
GHz
G
Small signal gain (1)
17
19
dB
∆G
Small signal gain flatness (1)
±1.5
dB
Is
Reverse isolation (1)
30
dB
P1db Output power at 1dB gain compression (1)
13
16
dBm
P03 Output power at 3dB gain compression
15
16
dBm
VSWRin Input VSWR (1)
3.0:1
VSWRout Output VSWR (1)
3.0:1
NF Noise figure
10.0
dB
Id
Bias current
150
200
mA
(1) These values are representative of on-wafer measurements that are made without bonding
wires at the RF ports.
Absolute Maximum Ratings
Tamb. = 25°C (1)
Symbol
Parameter
Values
Unit
Vd
Drain bias voltage
4.0
V
Id
Drain bias current
200
mA
Vg
Gate bias voltage
-2.0 to +0.4
V
Ta
Operating temperature range
-40 to +85
°C
Tstg
Storage temperature range
-55 to +155
°C
(1) Operation of this device above anyone of these parameters may cause permanent damage.
Ref. : DSCHA20981233 21-August-01
2/8
Specifications subject to change without notice
Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE
Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
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