2SK3373(2002) 查看數據表（PDF） - Toshiba
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2SK3373 Datasheet PDF : 6 Pages
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2SK3373
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSV)
2SK3373
Switching Regulator and DC-DC Converter Applications
Motor Drive Applications
Unit: mm
· Low drain-source ON resistance: RDS (ON) = 2.9 mΩ (typ.)
· High forward transfer admittance: |Yfs| = 1.7 S (typ.)
· Low leakage current: IDSS = 100 µA (max) (VDS = 500 V)
· Enhancement-model: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA)
Maximum Ratings (Ta = 25°C)
Characteristics
Drain-source voltage
Drain-gate voltage (RGS = 20 kW)
Gate-source voltage
DC
(Note 1)
Drain current
Pulse (t = 1 ms)
(Note 1)
Pulse (t = 100 ms)
(Note 1)
Drain power dissipation (Tc = 25°C)
Single pulse avalanche energy
(Note 2)
Avalanche current
Repetitive avalanche energy (Note 3)
Channel temperature
Storage temperature range
Symbol
VDSS
VDGR
VGSS
ID
IDP
IDP
PD
EAS
IAR
EAR
Tch
Tstg
Rating
Unit
500
V
500
V
±30
V
2
5
A
12
20
W
112
mJ
2
A
2
mJ
150
°C
-55 to150
°C
JEDEC
―
JEITA
―
TOSHIBA
2-7J1B
Weight: 0.36 g (typ.)
Thermal Characteristics
Characteristics
Symbol
Max
Unit
Thermal resistance, channel to case
Thermal resistance, channel to ambient
Rth (ch-c)
Rth (ch-a)
6.25
°C/W
125
°C/W
Note 1: Please use devices on condition that the channel temperature is below 150°C.
Note 2: VDD = 90 V, Tch = 25°C (initial), L = 48.4 mH, RG = 25 W, IAR = 2 A
Note 3: Repetitive rating: pulse width limited by maximum channel temperature
This transistor is an electrostatic sensitive device. Please handle with caution.
1
2002-09-02
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