2SK3389 查看數據表（PDF） - Toshiba
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2SK3389 Datasheet PDF : 7 Pages
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2SK3389
Electrical Characteristics (Note 4) (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min Typ. Max Unit
Gate leakage current
Drain cut-off current
Drain-source breakdown voltage
Gate threshold voltage
Drain-source ON resistance
Forward transfer admittance
Input capacitance
Reverse transfer capacitance
Output capacitance
IGSS
VGS = ±25 V, VDS = 0 V
⎯
⎯
±10
μA
IDSS
VDS = 30 V, VGS = 0 V
⎯
⎯
100
μA
V (BR) DSS ID = 10 mA, VGS = 0 V
30
⎯
⎯
V
Vth
VDS = 10 V, ID = 1 mA
2.0
⎯
4.0
V
RDS (ON) VGS = 10 V, ID = 38 A
⎯
3.8
5.0 mΩ
|Yfs|
VDS = 10 V, ID = 38 A
35
70
⎯
S
Ciss
⎯ 3530 ⎯
Crss
VDS = 10 V, VGS = 0 V, f = 1 MHz
⎯
570
⎯
pF
Coss
⎯ 1870 ⎯
Rise time
Switching time
Turn-on time
Fall time
Turn-off time
Total gate charge
(gate-source plus gate-drain)
Gate-source charge
Gate-drain (“miller”) charge
tr
VGS 10 V
0V
ton
ID = 38 A
⎯
10
⎯
VOUT
⎯
25
⎯
ns
tf
⎯
20
⎯
VDD ∼− 15 V
toff
Duty <= 1%, tw = 10 μs
⎯
65
⎯
Qg
⎯
62
⎯
Qgs
VDD ∼− 24 V, VGS = 10 V, ID = 75 A ⎯
43
⎯
nC
Qgd
⎯
19
⎯
Note 4: Connect the S1 and S2 pins, and ground them except during switching time measurement.
Source-Drain Ratings and Characteristics (Note 5) (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min Typ. Max Unit
Continuous drain reverse current
(Note 1, Note 5)
Pulse drain reverse current
(Note 1, Note 5)
Continuous drain reverse current
(Note 1, Note 5)
Pulse drain reverse current
(Note 1, Note 5)
Forward voltage (diode)
Reverse recovery time
Reverse recovery charge
IDR1
IDRP1
IDR2
IDRP2
VDS2F
trr
Qrr
⎯
⎯
⎯
⎯
IDR1 = 75 A, VGS = 0 V
IDR = 75 A, VGS = 0 V,
dIDR/dt = 50 A/μs
⎯
⎯
75
A
⎯
⎯
300
A
⎯
⎯
1
A
⎯
⎯
4
A
⎯
⎯
−1.5
V
⎯
120
⎯
ns
⎯
180
⎯
nC
Note 5: IDR1, IDRP1: Current flowing between the drain and the S2 pin. Ensure that the S1 pin is left open.
IDR2, IDRP2: Current flowing between the drain and the S1 pin. Ensure that the S2 pin is left open.
Unless otherwise specified, connect the S1 and S2 pins together, and ground them.
2
2006-11-16
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