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零件编号
产品描述 (功能)
2SK3389 查看數據表(PDF) - Toshiba
零件编号
产品描述 (功能)
生产厂家
2SK3389
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSII)
Toshiba
2SK3389 Datasheet PDF : 7 Pages
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2SK3389
r
th
– t
w
10
1
Duty
=
0.5
0.2
0.1
0.1
0.05
0.02
0.01
0.01
10
μ
Single
100
μ
PDM
t
T
Duty
=
t/T
Rth
(ch-c)
=
1.0°C/W
1m
10 m
100 m
1
10
Pulse width t
w
(s)
Safe operating area
1000
ID max (pulsed)
*
100
μ
s
*
100
ID max
(continuous)
10
1 ms
*
DC operation
Tc
=
25°C
*
: Single nonrepetitive pulse
1
Tc
=
25°C
Curves must be derated
linearly with increase in
temperature
VDSS max
0.1
0.1
1
10
100
Drain-source voltage VDS (V)
E
AS
– T
ch
1000
800
600
400
200
0
25
50
75
100
125
150
Channel temperature (initial) T
ch
(°C)
15 V
0V
Test circuit
R
G
=
25
Ω
V
DD
=
25 V, L
=
95
μ
H
B
VDSS
I
AR
V
DD
V
DS
Waveform
Ε
AS
=
1
2
⋅
L
⋅
I2
⋅
⎜⎛
⎜⎝
BVDSS
BVDSS
−
VDD
⎟⎞
⎟⎠
6
2006-11-16
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