2SK3510 查看數據表（PDF） - NEC => Renesas Technology
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2SK3510 Datasheet PDF : 8 Pages
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2SK3510
ELECTRICAL CHARACTERISTICS (TA = 25°C)
CHARACTERISTICS
SYMBOL
TEST CONDITIONS
Zero Gate Voltage Drain Current
IDSS
VDS = 75 V, VGS = 0 V
Gate Leakage Current
IGSS
VGS = ±20 V, VDS = 0 V
Gate Cut-off Voltage
VGS(off) VDS = 10 V, ID = 1 mA
Forward Transfer Admittance
| yfs | VDS = 10 V, ID = 42 A
Drain to Source On-state Resistance
RDS(on) VGS = 10 V, ID = 42 A
Input Capacitance
Ciss
VDS = 10 V
Output Capacitance
Coss
VGS = 0 V
Reverse Transfer Capacitance
Crss
f = 1 MHz
Turn-on Delay Time
td(on)
VDD = 38 V, ID = 42 A
Rise Time
tr
VGS = 10 V
Turn-off Delay Time
td(off)
RG = 0 Ω
Fall Time
tf
Total Gate Charge
QG
VDD = 60 V
Gate to Source Charge
QGS
VGS = 10 V
Gate to Drain Charge
QGD ID = 83 A
Body Diode Forward Voltage
VF(S-D) IF = 83 A, VGS = 0 V
Reverse Recovery Time
trr
IF = 83 A, VGS = 0 V
Reverse Recovery Charge
Qrr
di/dt = 100 A/ µs
MIN. TYP. MAX. UNIT
10 µA
±10 µA
2.0 3.0 4.0 V
30 60
S
6.5 8.5 mΩ
8500
pF
1300
pF
650
pF
35
ns
28
ns
105
ns
16
ns
150
nC
30
nC
52
nC
1.0
V
80
ns
240
nC
TEST CIRCUIT 1 AVALANCHE CAPABILITY
TEST CIRCUIT 2 SWITCHING TIME
D.U.T.
RG = 25 Ω
L
PG.
50 Ω
VDD
VGS = 20 → 0 V
IAS
ID
VDD
BVDSS
VDS
Starting Tch
TEST CIRCUIT 3 GATE CHARGE
D.U.T.
PG.
RG
VGS
0
τ
τ = 1 µs
Duty Cycle ≤ 1%
RL
VDD
VGS
VGS
Wave Form
10%
0
VDS
90%
VDS
VDS
0
Wave Form
td(on)
90%
VGS
90%
10% 10%
tr td(off)
tf
ton
toff
D.U.T.
IG = 2 mA
RL
PG.
50 Ω
VDD
2
Data Sheet D15687EJ1V0DS
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