2SK3510 查看數據表（PDF） - NEC => Renesas Technology
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2SK3510 Datasheet PDF : 8 Pages
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DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
14.0
12.0
P ulsed
10.0
8.0
6.0
4.0
2.0
VGS = 10 V
ID = 42 A
0.0
-100 -50
0
50 100 150 200
Tch - Channel Temperature - °C
SWITCHING CHARACTERISTICS
1000
100
10
1
0.1
tr
tf
td(off)
td(on)
VDD = 38 V
VGS = 10 V
RG = 0 Ω
1
10
100
ID - Drain Current - A
1000
SOURCE TO DRAIN DIODE
FORWARD VOLTAGE
P ulsed
100
10
VGS = 10 V
1
VGS = 0 V
0.1
0.01
0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2
VSD - Source to Drain Voltage - V
2SK3510
100000
10000
1000
CAPACITANCE vs.
DRAIN TO SOURCE VOLTAGE
C iss
C oss
VGS = 0 V
f = 1 MHz
C rss
100
0.1
1
10
100
VDS - Drain to Source Voltage - V
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
80
70
60
50
40
30
20
10
0
0
VDD = 60 V
VDD = 38 V
VDD = 15 V
ID = 83 A
VGS
VDS
50
100
150
16
14
12
10
8
6
4
2
0
200
QG - Gate Charge - nC
REVERSE RECOVERY TIME vs. DRAIN CURRENT
100
10
0 .1
VGS = 0 V
d i/d t = 1 0 0 A / µ s
1
10
100
IF - Drain Current - A
Data Sheet D15687EJ1V0DS
5
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