2SK3510 查看數據表（PDF） - NEC => Renesas Technology

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2SK3510

SWITCHING N-CHANNEL POWER MOS FET

NEC => Renesas Technology 

2SK3510

PACKAGE DRAWINGS (Unit: mm)

1) TO-220AB (MP-25)

10.6 MAX.

10.0 TYP.

φ 3.6±0.2

4.8 MAX.

1.3±0.2

4

123

1.3±0.2

0.75±0.1

2.54 TYP.

2.54 TYP.

0.5±0.2

1.Gate

2.Drain

3.Source

4.Fin (Drain)

2.8±0.2

2) TO-262 (MP-25 Fin Cut)

10 TYP.

4.8 MAX.

1.3±0.2

4

123

1.3±0.2

0.75±0.3

2.54 TYP.

0.5±0.2

2.54 TYP.

1.Gate

2.Drain

3.Source

4.Fin (Drain)

2.8±0.2

3) TO-263 (MP-25ZJ)

10 TYP.

4

4.8 MAX.

1.3±0.2

4) TO-220SMD (MP-25Z)Note

10 TYP.

4

4.8 MAX.

1.3±0.2

123

1.4±0.2

0.7±0.2

2.54 TYP.

2.54 TYP0. .5R0T.8YRP.TYP.

0.5±0.2

1.Gate

2.Drain

3.Source

4.Fin (Drain)

123

1.4±0.2

0.75±0.3

2.54 TYP.

2.54 TYP0..50R.8TRYPT.YP.

0.5±0.2

1.Gate

2.Drain

3.Source

4.Fin (Drain)

EQUIVALENT CIRCUIT

Drain

Gate

Body

Diode

Gate

Protection

Diode

Source

Note This package is produced only in Japan.

Remark

The diode connected between the gate and source of the transistor

serves as a protector against ESD. When this device actually used,

an additional protection circuit is externally required if a voltage

exceeding the rated voltage may be applied to this device.

Data Sheet D15687EJ1V0DS

7

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