2SK3511-Z 查看數據表（PDF） - NEC => Renesas Technology

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产品描述 (功能)

生产厂家

2SK3511-Z

SWITCHING N-CHANNEL POWER MOS FET

NEC => Renesas Technology 

2SK3511

PACKAGE DRAWINGS (Unit: mm)

1) TO-220 (MP-25)

10.6 MAX.

10.0 TYP.

φ 3.6±0.2

4.8 MAX.

1.3±0.2

4

123

1.3±0.2

0.75±0.1

2.54 TYP.

2.54 TYP.

0.5±0.2

1.Gate

2.Drain

3.Source

4.Fin (Drain)

2.8±0.2

3) TO-263 (MP-25ZJ)

10 TYP.

4

4.8 MAX.

1.3±0.2

2) TO-262 (MP-25 Fin Cut)

10 TYP.

4.8 MAX.

1.3±0.2

4

123

1.3±0.2

0.75±0.3

2.54 TYP.

0.5±0.2

2.54 TYP.

1.Gate

2.Drain

3.Source

4.Fin (Drain)

2.8±0.2

4) TO-220SMD (MP-25Z) Note

10 TYP.

4

4.8 MAX.

1.3±0.2

123

1.4±0.2

0.7±0.2

2.54 TYP.

2.54 TYP0. .5R0T.8YRP.TYP.

0.5±0.2

1.Gate

2.Drain

3.Source

4.Fin (Drain)

123

1.4±0.2

0.75±0.3

2.54 TYP.

2.54 TYP0..50R.8TRYPT.YP.

0.5±0.2

1.Gate

2.Drain

3.Source

4.Fin (Drain)

EQUIVALENT CIRCUIT

Drain

Gate

Body

Diode

Gate

Protection

Diode

Source

Note This Package is only produced in Japan.

Remark The diode connected between the gate and source of the transistor

serves as a protector against ESD. When this device actually

used, an additional protection circuit is externally required if a

voltage exceeding the rated voltage may be applied to this device.

Data Sheet D15617EJ1V0DS

7

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