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零件编号
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2SK3757(2006) 查看數據表(PDF) - Toshiba
零件编号
产品描述 (功能)
生产厂家
2SK3757
(Rev.:2006)
TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (π -MOSVI)
Toshiba
2SK3757 Datasheet PDF : 6 Pages
1
2
3
4
5
6
R
DS (ON)
– Tc
10
COMMON SOURCE
VGS
=
10 V
PULSE TEST
8
6
1.0
ID
=
2 A
4
0.5
2
0
−
80
−
40
0
40
80
120
160
CASE TEMPERATURE Tc (°C)
2SK3757
I
DR
– V
DS
10
COMMON SOURCE
Tc
=
25°C
3 PULSE TEST
1
0.3
10
0.1
3
0.03
1
VGS
=
0,
−
1 V
0.01
0
−
0.2
−
0.4
−
0.6
−
0.8
−
1.0
DRAIN
−
SOURCE VOLTAGE V
DS
(V)
CAPACITANCE – V
DS
1000
Ciss
100
Coss
10
Crss
COMMON SOURCE
V
GS
= 0V
f = 1MHz
Tc = 25℃
1
0.1
1
10
100
DRAIN
−
SOURCE VOLTAGE V
DS
(V)
V
th
– Tc
5
COMMON SOURCE
VDS
=
10 V
ID
=
1 mA
4
PULSE TEST
3
2
1
0
−
80
−
40
0
40
80
120
160
CASE TEMPERATURE Tc (°C)
P
D
– Tc
50
40
30
20
10
0
0
40
80
120
160
200
CASE TEMPERATURE Tc (°C)
DYNAMIC INPUT/OUTPUT
CHARACTERISTICS
500
400
VDS
20
COMMON SOURCE
ID
=
2 A
Tc
=
25°C
PULSE TEST
16
180
300
12
90
200
VDS
=
360 V
8
100
VGS
4
0
0
0
2
4
6
8
10
12
14
TOTAL GATE CHARGE Q
g
(nC)
4
2006-11-06
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