2SK3758 查看數據表（PDF） - Toshiba
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2SK3758 Datasheet PDF : 6 Pages
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2SK3758
Electrical Characteristics (Ta = 25°C)
Characteristics
Gate leakage current
Gate-source breakdown voltage
Drain cut-off current
Drain-source breakdown voltage
Gate threshold voltage
Drain-source ON resistance
Forward transfer admittance
Input capacitance
Reverse transfer capacitance
Output capacitance
Rise time
Switching time
Turn-on time
Fall time
Turn-off time
Total gate charge
Gate-source charge
Gate-drain charge
Symbol
Test Condition
Min Typ. Max Unit
IGSS
VGS = ±25 V, V DS = 0 V
±10 µA
V (BR) GSS ID = ±10 µA, V GS = 0 V
±30
V
IDSS
VDS = 500 V, V GS = 0 V
100 µA
V (BR) DSS ID = 10 mA, VGS = 0 V
500
V
Vth
VDS = 10 V, ID = 1 mA
2.0
4.0
V
RDS (ON) VGS = 10 V, ID = 2.5 A
1.35 1.50 Ω
Yf s
VDS = 10 V, ID = 2.5 A
1.5 3.5
S
Ciss
Crss
Coss
VDS = 25 V, V GS = 0 V, f = 1 MHz
550
7
pF
70
tr
10 V
VGS
ID = 2.5 A VOUT
10
0V
ton
15 Ω
RL =
20
90 Ω
ns
tf
10
VDD ∼− 225 V
toff
Duty <= 1%, tw = 10 µs
50
Qg
Qgs
VDD ∼− 400 V, VGS = 10 V, ID = 5 A
Qgd
16
10
nC
6
Source-Drain Ratings and Characteristics (Ta = 25°C)
Characteristics
Continuous drain reverse current
(Note 1)
Pulse drain reverse current
(Note 1)
Forward voltage (diode)
Reverse recovery time
Reverse recovery charge
Symbol
IDR
ID R P
VDSF
trr
Qrr
Test Condition
IDR = 5 A, V GS = 0 V
IDR = 5 A, V GS = 0 V,
dIDR/dt = 100 A/µs
Min Typ. Max Unit
5
A
20
A
−1.7 V
1400
ns
9
µC
Marking
※
K3758
※ Lot Number
TYPE
Date
Month (Starting from Alphabet A)
Year (Last Number of the Christian Era)
2
2004-02-26
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