2SK3767 查看數據表（PDF） - Toshiba
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2SK3767 Datasheet PDF : 6 Pages
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RDS (ON) – Tc
10
Common source
VGS =10V
8 pulse test
6
ID=2A
4
1
0.5
2
0
-100
-50
0
50
100
150
200
Case temperature (°C)
2SK3767
10
Common source
Tc = 25°C
Pulse test
IDR – VDS
1
0.1 10
3
1
VGS = 0, −1 V
0.01
0
−0.4
−0.8
−1.2
−1.6
Drain-source voltage (V)
Capacitance – VDS
1000
Ciss
100
Coss
10
Common source
VGS = 0 V
f = 1 MHz
Tc = 25°C
1
0.1
1
Crss
10
100
Drian-source voltage VDS (V)
Vth – Tc
6
Common source
5
VDS = 10 V
ID = 1 mA
4
Pulse test
3
2
1
0
−80
−40
0
40
80
120
150
Case temperature Tc (°C)
PD – Tc
50
40
30
20
10
0
0
40
80
120
160
Case temperature Tc (°C)
Dynamic Input / output
characteristics
800
16
600
400
200
0
0
200V
12
100V
VDD = 400V
8
Common source
ID = 7.5 A
4
Tc = 25°C
Pulse test
0
2
4
6
8
10
12
Total gate charge Qg (nC)
4
2009-09-29
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