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零件编号
产品描述 (功能)
2SK3797(2005) 查看數據表(PDF) - Toshiba
零件编号
产品描述 (功能)
生产厂家
2SK3797
(Rev.:2005)
TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (π -MOSVI)
Toshiba
2SK3797 Datasheet PDF : 6 Pages
1
2
3
4
5
6
I
D
– V
DS
14
10V
COMMON SOURCE
Tc
=
25°C
12
8V
7V
PULSE TEST
10
6.6V
6.2V
8
5.8V
6
5.4V
4
5V
2
VGS
=
4V
0
0
2
4
6
8
10
DRAIN
−
SOURCE VOLTAGE V
DS
(V)
2SK3797
I
D
– V
DS
30
10V
8V
COMMON SOURCE
Tc
=
25°C
25
PULSE TEST
7V
20
6.6V
15
6.2V
10
5.8V
5
5.4V
5V
0
VGS
=
4 V
0
5
10
15
20
25
30
DRAIN
−
SOURCE VOLTAGE V
DS
(V)
I
D
– V
GS
30
COMMON SOURCE
25
VDS
=
20 V
PULSE TEST
20
15
Tc
=
100°C
Tc
=
25°C
10
5
Tc
= −
55°C
0
0
2
4
6
8
GATE
−
SOURCE VOLTAGE V
GS
10
(V)
V
DS
– V
GS
10
COMMON SOURCE
Tc
=
25
℃
8
PULSE TEST
6
ID
=
13 A
4
ID
=
6.5 A
2
ID
=
3 A
0
0
4
8
12
16
20
GATE
−
SOURCE VOLTAGE V
GS
(V)
⎪
Y
fs
⎪
– I
D
100
COMMON SOURCE
VDS
=
20 V
PULSE TEST
Tc
= −
55°C
10
25
100
R
DS (ON)
– I
D
1
COMMON SOURCE
Tc
=
25°C
PULSE TEST
VGS
=
10 V
0.3
VGS
=
15 V
0.1
0.1
10
100
DRAIN CURRENT I
D
(A)
0.1
0.1
1
10
100
DRAIN CURRENT I
D
(A)
3
2005-01-24
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