2SK3714 查看數據表（PDF） - NEC => Renesas Technology
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2SK3714 Datasheet PDF : 8 Pages
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2SK3714
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
40
Pulsed
30
VGS = 4.0 V
10 V
20
10
ID = 40 A
0
−50
0
50 100 150
Tch - Channel Temperature - °C
CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE
10000
1000
VGS = 0 V
f = 1 MHz
Ciss
Coss
100
Crss
10
0.1
1
10
100
VDS - Drain to Source Voltage - V
1000
100
SWITCHING CHARACTERISTICS
VDD = 30 V
VGS = 10 V
RG = 0 Ω
td(off)
10
tr
td(on)
tf
1
0.1
1
10
100
ID - Drain Current - A
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
50
45
VDD = 48 V
30 V
40
12 V
35
10
ID = 50 A
Pulsed 9
8
7
30
6
25
5
20
VGS
4
15
3
10
2
5
VDS
1
0
0
0 10 20 30 40 50 60 70 80
QG - Gate Charge - nC
SOURCE TO DRAIN DIODE
FORWARD VOLTAGE
1000
Pulsed
100
VGS = 10 V
10
VGS = 0 V
1
0.10
0.5
1.0
1.5
VF(S-D) - Source to Drain Voltage - V
1000
REVERSE RECOVERY TIME vs.
DIODE FORWARD CURRENT
di/dt = 100 A/µs
VGS = 0 V
100
10
1
0.1
1
10
100
IF - Diode Forward Current - A
Data Sheet D16537EJ2V0DS
5
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