2SK3716 查看數據表（PDF） - NEC => Renesas Technology

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2SK3716

SWITCHING N-CHANNEL POWER MOS FET

NEC => Renesas Technology 

2SK3716

ELECTRICAL CHARACTERISTICS (TA = 25°C)

CHARACTERISTICS

SYMBOL

TEST CONDITIONS

Zero Gate Voltage Drain Current

IDSS

VDS = 40 V, VGS = 0 V

Gate Leakage Current

IGSS

VGS = ±20 V, VDS = 0 V

Gate Cut-off Voltage

Forward Transfer Admittance Note

Drain to Source On-state Resistance Note

VGS(off)

| yfs |

RDS(on)1

VDS = 10 V, ID = 1 mA

VDS = 10 V, ID = 30 A

VGS = 10 V, ID = 30 A

RDS(on)2 VGS = 4.5 V, ID = 30 A

Input Capacitance

Ciss

VDS = 10 V

Output Capacitance

Coss

VGS = 0 V

Reverse Transfer Capacitance

Crss

f = 1 MHz

Turn-on Delay Time

td(on)

VDD = 20 V, ID = 30 A

Rise Time

Turn-off Delay Time

tr

td(off)

VGS = 10 V

RG = 0 Ω

Fall Time

tf

Total Gate Charge

QG

VDD = 32 V

Gate to Source Charge

QGS

VGS = 10 V

Gate to Drain Charge

Body Diode Forward Voltage Note

QGD

VF(S-D)

ID = 60 A

IF = 60 A, VGS = 0 V

Reverse Recovery Time

Reverse Recovery Charge

trr

IF = 60 A, VGS = 0 V

Qrr

di/dt = 100 A/µs

Note Pulsed

MIN. TYP. MAX. UNIT

10 µA

±10 µA

1.5 2.0 2.5 V

22 43

S

5.2 6.5 mΩ

6.6 9.1 mΩ

2700

pF

770

pF

290

pF

11

ns

13

ns

69

ns

14

ns

50

nC

9

nC

13

nC

0.94 1.5 V

40

ns

42

nC

TEST CIRCUIT 1 AVALANCHE CAPABILITY

TEST CIRCUIT 2 SWITCHING TIME

D.U.T.

RG = 25 Ω

L

PG.

50 Ω

VDD

VGS = 20 → 0 V

BVDSS

IAS

ID

VDD

VDS

Starting Tch

TEST CIRCUIT 3 GATE CHARGE

D.U.T.

RG

PG.

VGS

0

τ

τ = 1 µs

Duty Cycle ≤ 1%

RL

VDD

VGS

VGS

Wave Form

10%

0

VDS

90%

VDS

VDS

0

Wave Form

td(on)

VGS

90%

90%

10% 10%

tr td(off) tf

ton

toff

D.U.T.

IG = 2 mA

RL

PG.

50 Ω

VDD

2

Data Sheet D16538EJ2V0DS

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