2SK3716 查看數據表（PDF） - NEC => Renesas Technology
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2SK3716 Datasheet PDF : 7 Pages
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2SK3716
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
16
ID = 30 A
14 Pulsed
12
10
8
VGS = 4 V
4.5 V
10 V
6
4
2
0
-100
-50
0
50 100 150 200
Tch - Channel Temperature - °C
CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE
10000
VGS = 0 V
f = 1 MHz
Ciss
1000
Coss
100
0.1
Crss
1
10
100
VDS - Drain to Source Voltage - V
SWITCHING CHARACTERISTICS
1000
VDD = 20 V
VGS = 10 V
RG = 0 Ω
100
tf
10
td(off)
tr
td(on)
1
0.1
1
10
100
ID - Drain Current - A
50
45
40
35
30
25
20
15
10
5
0
0
DYNAMIC INPUT/OUTPUT
CHARACTERISTICS
10
9
VDD = 32 V
8
20 V
8V
7
6
5
VGS
4
3
2
VDS
ID = 60 A
Pulsed 1
0
10
20
30
40
50
QG - Gate Charge - nC
1000
100
10
1
SOURCE TO DRAIN DIODE
FORWARD VOLTAGE
VGS = 10 V
4.5 V
0V
0.1
Pulsed
0.01
0
0.5
1
1.5
VF(S-D) - Source to Drain Voltage - V
REVERSE RECOVERY TIME vs.
DIODE FORWARD CURRENT
100
di/dt = 100 A/µs
VGS = 0 V
10
0.1
1
10
100
IF - Diode Forward Current - A
Data Sheet D16538EJ2V0DS
5
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