2SK3749 查看數據表（PDF） - NEC => Renesas Technology
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2SK3749 Datasheet PDF : 5 Pages
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ELECTRICAL CHARACTERISTICS (TA = 25°C)
CHARACTERISTICS
SYMBOL
TEST CONDITIONS
Zero Gate Voltage Drain Current
IDSS
VDS = 50 V, VGS = 0 V
Gate Leakage Current
Gate Cut-off Voltage
Forward Transfer Admittance Note
Drain to Source On-state Resistance Note
IGSS
VGS(off)
| yfs |
RDS(on)1
VGS = ±7.0 V, VDS = 0 V
VDS = 3.0 V, ID = 1.0 µA
VDS = 3.0 V, ID = 10 mA
VGS = 2.5 V, ID = 10 mA
RDS(on)2 VGS = 4.0 V, ID = 10 mA
Input Capacitance
Ciss
VDS = 3.0 V
Output Capacitance
Coss
VGS = 0 V
Reverse Transfer Capacitance
Crss
f = 1 MHz
Turn-on Delay Time
td(on)
VDD = 3.0 V, ID = 20 mA
Rise Time
tr
VGS = 3.0 V
Turn-off Delay Time
td(off)
RG = 10 Ω
Fall Time
tf
Note Pulsed: PW ≤ 350 µs, Duty Cycle ≤ 2%
TEST CIRCUIT SWITCHING TIME
D.U.T.
RG
PG.
VGS
0
τ
τ = 1 µs
Duty Cycle ≤ 1%
RL
VDD
VGS
VGS
Wave Form
0 10%
VGS
90%
ID
90%
ID
Wave Form
0 10%
td(on)
ID
tr td(off)
90%
10%
tf
ton
toff
2SK3749
MIN.
0.9
20
TYP.
1.2
20
15
6.0
8.0
1.2
9.0
50
20
40
MAX.
1.0
±5.0
1.5
40
20
UNIT
µA
µA
V
mS
Ω
Ω
pF
pF
pF
ns
ns
ns
ns
2
Data Sheet D17136EJ1V0DS
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