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2SK881 查看數據表(PDF) - Toshiba

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2SK881 Datasheet PDF : 6 Pages
1 2 3 4 5 6
TOSHIBA Field Effect Transistor Silicon N Channel Junction Type
2SK881
FM Tuner Applications
VHF Band Amplifier Applications
2SK881
Unit: mm
Low noise figure: NF = 2.5dB (typ.) (f = 100 MHz)
High forward transfer admittance: |Yfs| = 9 mS (typ.)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Gate-drain voltage
Gate current
Drain power dissipation
Junction temperature
Storage temperature range
VGDO
IG
PD
Tj
Tstg
18
V
10
mA
100
mW
125
°C
55~125
°C
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the
Toshiba Semiconductor Reliability Handbook (“Handling
Precautions”/“Derating Concept and Methods”) and individual
reliability data (i.e. reliability test report and estimated failure rate, etc).
JEDEC
JEITA
SC-70
TOSHIBA
2-2E1C
Weight: 0.006 g (typ.)
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Gate leakage current
Gate-drain breakdown voltage
Drain current
Gate-source cut-off voltage
Forward transfer admittance
Input capacitance
Reverse transfer capacitance
Power gain
Noise figure
IGSS
VGS = −0.5 V, VDS = 0
V (BR) GDO IG = −10 μA
IDSS
VGS = 0, VDS = 10 V
(Note)
VGS (OFF)
Yfs
Ciss
Crss
Gps
NF
VDS = 10 V, ID = 1 μA
VGS = 0, VDS = 10 V, f = 1 kHz
VDS = 10 V, VGS = 0, f = 1 MHz
VDS = 10 V, VGS = 0, f = 1 MHz
VDD = 10 V, f = 100 MHz (Figure 1)
VDD = 10 V, f = 100 MHz (Figure 1)
Note: IDSS classification O: 1.0~3.0, Y: 2.5~6.0, GR: 5.0~10.0
Min Typ. Max Unit
10
nA
18
V
1.0
10
mA
0.4
4.0
V
9
mS
6.0
pF
0.15 pF
10
18
dB
2.5
3.5
dB
1
2007-11-01

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