DatasheetQ Logo
Electronic component search and free download site. Transistors,MosFET ,Diode,Integrated circuits

30CPQ090GPBF 查看數據表(PDF) - Vishay Semiconductors

零件编号
产品描述 (功能)
生产厂家
30CPQ090GPBF
Vishay
Vishay Semiconductors Vishay
30CPQ090GPBF Datasheet PDF : 6 Pages
1 2 3 4 5 6
30CPQ080G/30CPQ090G/30CPQ100G
Vishay High Power Products Schottky Rectifier, 2 x 15 A
ELECTRICAL SPECIFICATIONS
PARAMETER
SYMBOL
Maximum forward voltage drop per leg
See fig. 1
VFM (1)
Maximum reverse leakage current per leg
See fig. 2
Maximum junction capacitance per leg
Typical series inductance per leg
Maximum voltage rate of change
Note
(1) Pulse width < 300 µs, duty cycle < 2 %
IRM (1)
CT
LS
dV/dt
TEST CONDITIONS
VALUES
15 A
30 A
0.86
TJ = 25 °C
1.05
15 A
30 A
0.67
TJ = 125 °C
0.81
TJ = 25 °C
TJ = 125 °C
VR = Rated VR
VR = 5 VDC (test signal range 100 kHz to 1 MHz) 25 °C
Measured lead to lead 5 mm from package body
0.28
7
500
7.5
Rated VR
10 000
UNITS
V
mA
pF
nH
V/µs
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
Maximum junction and storage
temperature range
TJ, TStg
Maximum thermal resistance,
junction to case per leg
Maximum thermal resistance,
junction to case per package
RthJC
DC operation
See fig. 4
DC operation
Typical thermal resistance,
case to heatsink
RthCS
Mounting surface, smooth and greased
Approximate weight
Mounting torque
minimum
maximum
Non-lubricated threads
Marking device
Case style TO-247AC (JEDEC)
VALUES UNITS
- 55 to 175 °C
2.20
1.10
°C/W
0.24
6
g
0.21
oz.
6 (5)
12 (10)
kgf cm
(lbf in)
30CPQ080G
30CPQ090G
30CPQ100G
www.vishay.com
2
For technical questions, contact: diodes-tech@vishay.com
Document Number: 93303
Revision: 22-Aug-08

Share Link: 

datasheetq.com  [ Privacy Policy ]Request Datasheet ] [ Contact Us ]