30N06-TA3-T 查看數據表（PDF） - Unisonic Technologies

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30N06-TA3-T

30 Amps, 60 Volts N-CHANNEL POWER MOSFET

Unisonic Technologies 

30N06

MOSFET

ELECTRICAL CHARACTERISTICS (Cont.)

PARAMETER

SYMBOL

Source-Drain Diode Ratings and Characteristics

Diode Forward Voltage

VSD

Maximum Continuous Drain-Source

Diode Forward Current

IS

TEST CONDITIONS

MIN TYP MAX UNIT

IS = 30A, VGS = 0 V

Integral Reverse p-n Junction Diode in

the MOSFET

D

1.4 V

30 A

Maximum Pulsed Drain-Source Diode

Forward Current

ISM

G

S

Reverse Recovery Time

tRR

IS = 30A, VGS = 0 V

Reverse Recovery Charge

QRR

dIF / dt = 100 A/µs (Note4)

Note 1. Repeativity rating: pulse width limited by junction temperature

2. L=19.5mH, IAS=30A, RG=20Ω, Starting TJ=25℃

3. ISD≤50A, di/dt≤300A/µs, VDD≤BVDSS, Starting TJ=25℃

4. Pulse Test: Pulse Width≤300µs,Duty Cycle≤2%

5. Essentially independent of operating temperature.

120 A

40

ns

70

µC

UNISONIC TECHNOLOGIES CO., LTD

www.unisonic.com.tw

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QW-R502-087,A

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