31DQ10-M3 查看數據表（PDF） - Vishay Semiconductors
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31DQ10-M3 Datasheet PDF : 6 Pages
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VS-31DQ09, VS-31DQ09-M3, VS-31DQ10, VS-31DQ10-M3
www.vishay.com
Vishay Semiconductors
10
1
TJ = 150 °C
TJ = 125 °C
TJ = 25 °C
0.1
0
0.3
0.6
0.9
1.2
93321_01
VFM - Forward Voltage Drop (V)
Fig. 1 - Maximum Forward Voltage Drop Characteristics
10
TJ = 150 °C
1
TJ = 125 °C
0.1
0.01
0.001
0.0001
TJ = 25 °C
0
0
20
40
60
80
100
93321_02
VR - Reverse Voltage (V)
Fig. 2 - Typical Values of Reverse Current vs.
Reverse Voltage
1000
160
140
DC
120
100
Square wave (D = 0.50)
80 % Rated VR applied
80
see note (1)
60
0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 5.5
93321_04
IF(AV) - Average Forward Current (A)
Fig. 4 - Maximum Allowable Lead Temperature vs.
Average Forward Current
4
D = 0.20
D = 0.25
D = 0.33
3 D = 0.50
D = 0.75
DC
2 RMS Limit
1
0
0
1
2
3
4
5
93321_05
Average Forward Current - IF(AV) (A)
Fig. 5 - Forward Power Loss Characteristics
1000
T = 25 °C
J
100
100
At Any Rated Load Condition
And With rated VRRM Applied
Following Surge
10
0
40
80
120
160
10
10
100
1000
10 000
93321_03
VR - Reverse Voltage (V)
Fig. 3 - Typical Junction Capacitance vs.
Reverse Voltage
93321_06
tp - Square Wave Pulse Duration (µs)
Fig. 6 - Maximum Non-Repetitive Surge Current
Note
(1) Formula used: TC = TJ - (Pd + PdREV) x RthJL;
Pd = Forward power loss = IF(AV) x VFM at (IF(AV)/D) (see fig. 6); PdREV = Inverse power loss = VR1 x IR (1 - D); IR at VR1 = 80 % rated VR
Revision: 19-Sep-11
3
Document Number: 93321
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