MC33797BPEW/R2 查看數據表（PDF） - Freescale Semiconductor
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MC33797BPEW/R2 Datasheet PDF : 35 Pages
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ELECTRICAL CHARACTERISTICS
STATIC ELECTRICAL CHARACTERISTICS
Table 3. Static Electrical Characteristics (continued)
Characteristics noted under conditions 4.75 V ≤ VDD ≤ 5.25 V; 7.0 V ≤ VVFIRE_XX ≤ 35 V; VVDIAG_X = VVFIRE_XX;
FEN 1 = FEN 2 = VDD; RR_LIMIT_X = 10 kΩ ±1%, RR_DIAG = 10 kΩ ±1%, -40 °C ≤ TA ≤ +85 °C, GND = 0, unless otherwise noted.
Typical values noted reflect the approximate parameter means at TA = 25°C under nominal conditions, unless otherwise noted.
Characteristic
Symbol
Min
Typ
Max
Unit
R_HS Short Threshold
RHSS
2.8
–
4.1
kΩ
VFIRE_XA & VFIRE_XB Current during High Side Safing Test at Open
Threshold
VFIRE_1A & VFIRE_1B or VFIRE_2A & VFIRE_2B
I1HSO
μA
270
360
410
VFIRE_XA & VFIRE_XB Current during High Side Safing Test at Short
Threshold
VFIRE_1A & VFIRE_1B or VFIRE_2A & VFIRE_2B
I1HSS
μA
287
385
439
HIGH SIDE SAFING SENSOR DIAGNOSTICS WITH 1 SAFING SENSOR IN FIRING PATH CONNECTED TO VFIRE_1A AND VFIRE_2A
PINS (GUARANTEED BY DESIGN) ($C0 COMMAND)
Total VFIRE_XX Current during High Side Safing Test at Open Threshold
VFIRE_1A, VFIRE_1B, VFIRE_2A & VFIRE_2B pins
I2HSO
μA
574
705
848
Total VFIRE_XX Current during High Side Safing Test at Short Threshold
VFIRE_1A, VFIRE_1B, VFIRE_2A & VFIRE_2B pins
I2HSS
μA
605
748
892
R_HS Valid Resistor Range
15 V ≤ VVDIAG_X ≤ 35 V
R2HS
kΩ
2.10
–
2.93
R_HS Open Threshold
15 V ≤ VVDIAG_X ≤ 35 V
R2HSO
2.93
3.35
kΩ
4.43
R_HS Short Threshold
15 V ≤ VVDIAG_X ≤ 35 V
R2HSS
kΩ
1.14
1.61
2.10
R_LIMIT RESISTOR DIAGNOSTICS ($C8 COMMAND)
R_LIMIT Valid Resistor Range
R_LIMIT Open Threshold (“Out of Range Threshold”)
R_LIMIT Short-to-Ground Threshold (“Out of Range Threshold”)
Maximum External Capacitance to Ground
R_DIAG RESISTOR DIAGNOSTICS ($C8 COMMAND) (17)
RRL
RRLO
RRLS
CRL
4.32
60
2.82
–
–
45.3
kΩ
76
105
kΩ
3.5
4.31
kΩ
–
20
pF
R_DIAG Valid Resistor Range
RRD
8.0
–
13
kΩ
R_DIAG Open Threshold (“Out of Range Threshold”)
RRDO
13
23
60
kΩ
R_DIAG Short-to-Ground Threshold (“Out of Range Threshold”)
RRDS
3.0
5.4
8.0
kΩ
Maximum External Capacitance to Ground
CRD
–
–
20
pF
Notes
17 By changing the R_DIAG resistor value, the resistance thresholds can be varied by a linear relationship.The R_DIAG resistance could
be changed by ±10% to shift the thresholds by ±10%. Design goal for resistance threshold change is ±15%. R_DIAG threshold limit may
have to be changed to accommodate ±15% change. Example: Shifting the R_DIAG resistance value ±10%, the resistance threshold
will change by ±10%. Refer to Table 4.
Analog Integrated Circuit Device Data
Freescale Semiconductor
33797
11
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