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33982 查看數據表(PDF) - Freescale Semiconductor

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33982 Datasheet PDF : 36 Pages
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ELECTRICAL CHARACTERISTICS
STATIC ELECTRICAL CHARACTERISTICS
STATIC ELECTRICAL CHARACTERISTICS
Table 4. Static Electrical Characteristics
Characteristics noted under conditions 4.5 V VDD 5.5 V, 6.0 V VPWR 27 V, -40°C TA 125°C, unless otherwise noted.
Typical values noted reflect the approximate parameter mean at TA = 25°C under nominal conditions, unless otherwise noted.
Characteristic
Symbol
Min
Typ
Max
Unit
POWER INPUT
Battery Supply Voltage Range
Full Operational
VPWR
6.0
VPWR Operating Supply Current
Output ON, IHS = 0 A
IPWR(ON)
VPWR Supply Current
Output OFF, Open Load Detection Disabled, WAKE > 0.7 VDD,
RST = VLOGIC HIGH
IPWR(SBY)
Sleep State Supply Current (VPWR < 14 V, RST < 0.5 V, WAKE < 0.5 V) IPWR(SLEEP)
TJ = 25°C
TJ = 85°C
VDD Supply Voltage
VDD Supply Current
No SPI Communication
3.0 MHz SPI Communication
VDD(ON)
4.5
IDD(ON)
VDD Sleep State Current
Over-voltage Shutdown Threshold
Over-voltage Shutdown Hysteresis
Under-voltage Output Shutdown Threshold(8)
Under-voltage Hysteresis(9)
Under-voltage Power-ON Reset
POWER OUTPUT
IDD(SLEEP)
VPWR(OV)
28
VPWR(OVHYS)
0.2
VPWR(UV)
5.0
VPWR(UVHYS)
VPWR(UVPOR)
Output Drain-to-Source ON Resistance (IHS = 30 A, TJ = 25°C)
VPWR = 6.0 V
VPWR = 10 V
VPWR = 13 V
Output Drain-to-Source ON Resistance (IHS = 30 A, TJ = 150°C)
VPWR = 6.0 V
VPWR = 10 V
VPWR = 13 V
Output Source-to-Drain ON Resistance (IHS = 30 A, TJ = 25°C)(10)
VPWR = -12 V
RDS(ON)
RDS(ON)
RDS(ON)
V
27
mA
20
mA
5.0
μA
10
50
5.0
5.5
V
mA
1.0
5.0
5.0
μA
32
36
V
0.8
1.5
V
5.5
6.0
V
0.25
V
5.0
V
mΩ
3.0
2.0
2.0
mΩ
5.1
3.4
3.4
mΩ
2.0
4.0
Notes
8. This applies to all internal device logic that is supplied by VPWR and assumes that the external VDD supply is within specification.
9. This applies when the under-voltage fault is not latched (IN = 0).
10. Source-Drain ON Resistance (Reverse Drain-to-Source ON Resistance) with negative polarity VPWR.
33982
8
Analog Integrated Circuit Device Data
Freescale Semiconductor

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