36MT80 查看數據表（PDF） - Vishay Semiconductors
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36MT80 Datasheet PDF : 7 Pages
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26MT../36MT.. Series
Vishay High Power Products Three Phase Bridge
(Power Modules), 25/35 A
FORWARD CONDUCTION
PARAMETER
SYMBOL
TEST CONDITIONS
Maximum DC output current at TC
IO
Maximum peak, one-cycle
non-repetitive forward current
IFSM
Maximum I2t for fusing
I2t
Maximum I2√t for fusing
I2√t
Low level of threshold voltage
High level of threshold voltage
VF(TO)1
VF(TO)2
Low level forward slope resistance
rt1
High level forward slope resistance
rt2
Maximum forward voltage drop
VFM
Maximum DC reverse current
IRRM
RMS isolation voltage
VINS
120° rect. conduction angle
t = 10 ms
t = 8.3 ms
No voltage
reapplied
t = 10 ms
t = 8.3 ms
t = 10 ms
t = 8.3 ms
100 % VRRM
reapplied
No voltage
reapplied
Initial
TJ = TJ maximum
t = 10 ms
t = 8.3 ms
100 % VRRM
reapplied
I2t for time tx = I2√t x √tx; 0.1 ≤ tx ≤ 10 ms, VRRM = 0 V
(16.7 % x π x IF(AV) < I < π x IF(AV)), TJ maximum
( I > π x IF(AV)), TJ maximum
(16.7 % x π x IF(AV) < I < π x IF(AV)), TJ maximum
( I > π x IF(AV)), TJ maximum
TJ = 25 °C, IFM = 40 Apk - per single junction
TJ = 25 °C, per junction at rated VRRM
TJ = 25 °C, all terminal shorted; f = 50 Hz, t = 1 s
VALUES
26MT
36MT
25
35
70
60
360
475
375
500
300
400
314
420
635
1130
580
1030
450
800
410
730
6360
11 300
0.88
0.86
1.13
1.03
7.9
6.3
5.2
5.0
1.26
1.19
100
2700
UNITS
A
°C
A
A2s
A2√s
V
mΩ
V
µA
V
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
Maximum junction and storage
temperature range
Maximum thermal resistance,
junction to case
Maximum thermal resistance,
case to heatsink
Approximate weight
Mounting torque ± 10 %
TJ, TStg
RthJC
RthCS
DC operation per bridge
(based on total power loss of bridge)
Mounting surface, smooth, flat and greased
Bridge to heatsink with screw M4
VALUES
26MT
36MT
- 55 to 150
1.42
1.35
0.2
0.2
20
2.0
UNITS
°C
K/W
g
Nm
www.vishay.com
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For technical questions, contact: ind-modules@vishay.com
Document Number: 93565
Revision: 03-Nov-08
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