39LF020 查看數據表（PDF） - Silicon Storage Technology

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39LF020

512 Kbit / 1 Mbit / 2 Mbit / 4 Mbit (x8) Multi-Purpose Flash

Silicon Storage Technology 

512 Kbit / 1 Mbit / 2 Mbit / 4 Mbit Multi-Purpose Flash

SST39LF512 / SST39LF010 / SST39LF020 / SST39LF040

SST39VF512 / SST39VF010 / SST39VF020 / SST39VF040

Data Sheet

TABLE 5: DC OPERATING CHARACTERISTICS

VDD = 3.0-3.6V FOR SST39LF512/010/020/040 AND 2.7-3.6V FOR SST39VF512/010/020/040

Limits

Symbol Parameter

Min Max Units Test Conditions

IDD

ISB

ILI

ILO

VIL

VIH

VIHC

VOL

VOH

Power Supply Current

Read

Write

Standby VDD Current

Input Leakage Current

Output Leakage Current

Input Low Voltage

Input High Voltage

Input High Voltage (CMOS)

Output Low Voltage

Output High Voltage

20

20

15

1

10

0.8

0.7VDD

VDD-0.3

0.2

VDD-0.2

Address input=VIL/VIH, at f=1/TRC Min

VDD=VDD Max

mA CE#=OE#=VIL, WE#=VIH, all I/Os open

mA CE#=WE#=VIL, OE#=VIH

µA CE#=VIHC, VDD=VDD Max

µA VIN=GND to VDD, VDD=VDD Max

µA VOUT=GND to VDD, VDD=VDD Max

V VDD=VDD Min

V VDD=VDD Max

V VDD=VDD Max

V IOL=100 µA, VDD=VDD Min

V IOH=-100 µA, VDD=VDD Min

T5.2 395

TABLE 6: RECOMMENDED SYSTEM POWER-UP TIMINGS

Symbol

Parameter

Minimum

Units

TPU-READ1

Power-up to Read Operation

100

µs

TPU-WRITE1

Power-up to Program/Erase Operation

100

µs

T6.1 395

1. This parameter is measured only for initial qualification and after a design or process change that could affect this parameter.

TABLE 7: CAPACITANCE (Ta = 25°C, f=1 Mhz, other pins open)

Parameter

Description

Test Condition

Maximum

CI/O1

CIN1

I/O Pin Capacitance

Input Capacitance

VI/O = 0V

VIN = 0V

12 pF

6 pF

T7.0 395

1. This parameter is measured only for initial qualification and after a design or process change that could affect this parameter.

TABLE 8: RELIABILITY CHARACTERISTICS

Symbol

Parameter

Minimum Specification

Units Test Method

NEND1

Endurance

10,000

Cycles JEDEC Standard A117

TDR1

Data Retention

100

Years JEDEC Standard A103

ILTH1

Latch Up

100 + IDD

mA JEDEC Standard 78

T8.2 395

1. This parameter is measured only for initial qualification and after a design or process change that could affect this parameter.

©2001 Silicon Storage Technology, Inc.

8

S71150-03-000 6/01 395

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