3N60-X-TN3-R 查看數據表（PDF） - Unisonic Technologies

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3N60-X-TN3-R

3 Amps, 600/650 Volts N-CHANNEL POWER MOSFET

Unisonic Technologies 

3N60

Power MOSFET

„ ELECTRICAL CHARACTERISTICS(Cont.)

SWITCHING CHARACTERISTICS

PARAMETER

SYMBOL

TEST CONDITIONS

MIN TYP MAX UNIT

Turn-On Delay Time

tD(ON)

10 30 ns

Turn-On Rise Time

Turn-Off Delay Time

tR

tD(OFF)

VDD = 300V, ID = 3.0 A, RG = 25Ω

(Note 4, 5)

30 70 ns

20 50 ns

Turn-Off Fall Time

tF

30 70 ns

Total Gate Charge

Gate-Source Charge

Gate-Drain Charge

QG

QGS

VDS= 480V,ID= 3.0A, VGS= 10 V

(Note 4, 5)

QDD

SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS

10 13 nC

2.7

nC

4.9

nC

Drain-Source Diode Forward Voltage

VSD

VGS = 0 V, IS = 3.0 A

1.4 V

Maximum Continuous Drain-Source Diode

Forward Current

IS

3.0 A

Maximum Pulsed Drain-Source Diode

Forward Current

ISM

12 A

Reverse Recovery Time

Reverse Recovery Charge

tRR

VGS = 0 V, IS = 3.0 A,

QRR dIF/dt = 100 A/μs (Note 4)

210

ns

1.2

μC

Notes: 1. Repetitive Rating: Pulse width limited by maximum junction temperature

2. L = 64mH, IAS = 2.4A, VDD = 50V, RG = 25 Ω, Starting TJ = 25°C

3. ISD ≤ 3.0A, di/dt ≤200A/μs, VDD ≤ BVDSS, Starting TJ = 25°C

4. Pulse Test: Pulse width ≤ 300μs, Duty cycle ≤ 2%

5. Essentially independent of operating temperature

UNISONIC TECHNOLOGIES CO., LTD

www.unisonic.com.tw

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