3SK294 查看數據表（PDF） - Toshiba
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3SK294 Datasheet PDF : 5 Pages
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3SK294
TOSHIBA Field Effect Transistor Silicon N-Channel Dual Gate MOS Type
3SK294
TV Tuner, VHF RF Amplifier Application
Unit: mm
• Superior cross modulation performance
• Low reverse transfer capacitance: Crss = 20 fF (typ.)
• Low noise figure: NF = 1.4dB (typ.)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drain-source voltage
VDS
12.5
V
Gate 1-source voltage
VG1S
±8
V
Gate 2-source voltage
VG2S
±8
V
Drain current
Drain power dissipation
Channel temperature
Storage temperature range
ID
30
mA
PD
100
mW
Tch
125
°C
Tstg
−55 to 125
°C
USQ
1.Drain
2.Source
3.Gate1
4.Gate2
JEDEC
―
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
JEITA
―
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the
TOSHIBA
2-2K1B
Weight: 6 mg (typ.)
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Electrical Characteristics (Ta = 25°C)
Characteristics
Gate 1 leakage current
Gate 2 leakage current
Drain-source voltage
Drain current
Gate 1-source cut-off voltage
Gate 2-source cut-off voltage
Forward transfer admittance
Input capacitance
Reverse transfer capacitance
Power gain
Noise figure
Symbol
Test Condition
Min Typ. Max Unit
IG1SS
VDS = 0, VG1S = ±6 V, VG2S = 0
⎯
⎯
±50
nA
IG2SS
VDS = 0, VG1S = 0, VG2S = ±6 V
⎯
⎯
±50
nA
V (BR) DSX
VG1S = −0.5 V, VG2S = −0.5 V,
ID = 100 μA
12.5 ⎯
⎯
V
IDSS
VDS = 6 V, VG1S = 0, VG2S = 4.5 V
⎯
⎯
0.1 mA
VG1S (OFF) VDS = 6 V, VG2S = 4.5 V, ID = 100 μA
0.3
0.9
1.3
V
VG2S (OFF) VDS = 6 V, VG1S = 4.0 V, ID = 100 μA
0.5
1.0
1.5
V
⎪Yfs⎪
VDS = 6 V, VG2S = 4.5 V, ID = 10 mA,
19.5 23.5
⎯
f = 1 kHz
mS
Ciss
VDS = 6 V, VG2S = 4.5 V, ID = 10 mA,
⎯
2.5
3.1
pF
Crss
f = 1 MHz
⎯
20
40
fF
Gps
VDS = 6 V, VG2S = 4.5 V, ID = 10 mA, 23.5 26.0
⎯
dB
NF
f = 500 MHz (Figure 1)
⎯
1.4
2.5
dB
Start of commercial production
1996-10
1
2014-03-01
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