FT1008MH 查看數據表（PDF） - Formosa Technology
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FT1008MH Datasheet PDF : 4 Pages
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FT1008.H
LOGIC LEVEL TRIAC
Electrical Characteristics
SYMBOL
PARAMETER
CONDITIONS
Quadrant
IGT (1)
Gate Trigger Current
IDRM /IRRM Off-State Leakage Current
Vto (2)
Rd(2)
VTM (2)
VGT
VGD
IH (2)
IL
Threshold Voltage
Dynamic Resistance
On-state Voltage
Gate Trigger Voltage
Gate Non Trigger Current
Holding Current
Latching Current
dv / dt (2) Critical Rate of Voltage Rise
(dI/dt)c (2) Critical Rate of Current Rise
Rth(j-c)
Rth(j-a)
Thermal Resistance
Junction-Case
Thermal Resistance
Junction-Ambient
VD = 12 VDC , RL = 33Ω, Tj = 25 ºC
VD = VDRM ,
Tj = 125 ºC
VR = VRRM ,
Tj = 25 ºC
Tj = 125 ºC
Tj = 125 ºC
IT = 14 Amp, tp = 380 µs, Tj = 25 ºC
VD = 12 VDC , RL = 33Ω, Tj = 25 ºC
VD = VDRM , RL = 3.3KΩ, Tj = 125 ºC
IT = 500 mA , Gate open, Tj = 25 ºC
IG = 1.2 IGT, Tj = 25 ºC
VD = 0.67 x VDRM , Gate open
Tj = 125 ºC
(dv/dt)c= 0.1 V/µs
(dv/dt)c= 10 V/µs
without snubber
Tj = 125 ºC
Tj = 125 ºC
Tj = 125 ºC
for AC 360º conduction angle
Q1÷Q3
Q1÷Q3
Q1÷Q3
Q1,Q3
Q2
MAX
MAX
MAX
MAX
MAX
MAX
MAX
MIN
MAX
MAX
MAX
MIN
MIN
MIN
MIN
(1) Minimum IGT is guaranted at 5% of IGT max.
(2) For either polarity of electrode MT2 voltage with reference to electrode MT1.
SENSITIVITY
08
10
1
5
0.85
40
1.55
1.3
0.2
15
25
30
40
6.5
2.9
-
1.5
60
Unit
mA
mA
µA
V
mΩ
V
V
V
mA
mA
V/µs
A/ms
ºC/W
ºC/W
PART NUMBER INFORMATION
FAGOR
TRIAC
CURRENT
F T 10
08 B H 00 TU
PACKAGING
FORMING
CASE
VOLTAGE
SENSITIVITY
Jul - 02
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