40HF10 查看數據表（PDF） - Vishay Semiconductors
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40HF10 Datasheet PDF : 7 Pages
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40HF(R) Series
Vishay High Power Products Standard Recovery Diodes,
(Stud Version), 40 A
FORWARD CONDUCTION
PARAMETER
SYMBOL
Maximum average forward current
at case temperature
Maximum RMS forward current
IF(AV)
IF(RMS)
Maximum peak, one-cycle forward,
non-repetitive surge current
IFSM
Maximum I2t for fusing
I2t
Maximum I2√t for fusing
Value of threshold voltage
(up to 1200 V)
Value of threshold voltage
(for 1400 V/1600 V)
Value of forward slope resistance
(up to 1200 V)
Value of forward slope resistance
(for 1400 V/1600 V)
Maximum forward voltage drop
I2√t
VF(TO)
VF(TO)
rf
rf
VFM
TEST CONDITIONS
40HF(R)
10 TO 120 140/160
180° conduction, half sine wave
40
40
140
110
62
t = 10 ms No voltage
570
t = 8.3 ms reapplied
595
t = 10 ms
t = 8.3 ms
t = 10 ms
t = 8.3 ms
100 % VRRM
reapplied
No voltage
reapplied
Sinusoidal half wave,
initial TJ = TJ maximum
480
500
1600
1450
t = 10 ms
t = 8.3 ms
100 % VRRM
reapplied
1150
1050
t = 0.1 to 10 ms, no voltage reapplied
16 000
TJ = TJ maximum
0.65
0.76
TJ = TJ maximum
Ipk = 125 A, TJ = 25 °C, tp = 400 µs rectangular wave
4.29
3.8
1.30
1.50
UNITS
A
°C
A
A
A2s
A2√s
V
mΩ
V
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
Maximum junction operating and
storage temperature range
Maximum thermal resistance,
junction to case
Maximum thermal resistance,
case to heatsink
TJ, TStg
RthJC
DC operation
RthCS Mounting surface, smooth, flat and greased
Allowable mounting torque
Not lubricated threads
Lubricated threads
Approximate weight
Case style
See dimensions - link at the end of datasheet
40HF(R)
10 TO 120 140/160
UNITS
- 65 to 190 - 65 to 160 °C
0.95
K/W
0.25
3.4 + 0 - 10 %
(30)
2.3 + 0 - 10 %
(20)
N·m
(lbf · in)
17
g
0.6
oz.
DO-203AB (DO-5)
www.vishay.com
2
For technical questions, contact: ind-modules@vishay.com
Document Number: 93513
Revision: 23-Jun-08
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