4N65K 查看數據表（PDF） - Unisonic Technologies
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4N65K Datasheet PDF : 8 Pages
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4N65K
TYPICAL CHARACTERISTICS
Breakdown Voltage Variation vs.
Temperature
1.2
1.1
1.0
0.9
0.8
-100
Note:
1. VGS=0V
2. ID=250µA
-50 0
50 100 150 200
Junction Temperature, TJ (°С)
On-State Characteristics
10
VGS
Top: 10V
9V
8V
7V
6V
5.5V
5 V Bottorm:5.0V
1
5.0V
0.1
Notes:
1. 250µs Pulse Test
2. TC=25°С
0.1
1
10
Drain-to-Source Voltage, VDS (V)
Power MOSFET
On-Resistance Junction Temperature
3.0
2.5
2.0
1.5
1.0
0.5
0.0
-100
Note:
1. VGS=10V
2. ID=4A
-50 0 50 100 150 200
Junction Temperature, TJ (°С)
Transfer Characteristics
10
25°С
www.DataSheet.net/
1 150°С
0.1
2
Notes:
1. VDS=50V
2. 250µs Pulse Test
4
6
8
10
Gate-Source Voltage, VGS (V)
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
6 of 8
QW-R502-840.A
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