50N06 查看數據表（PDF） - Unisonic Technologies

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50N06

50 Amps, 60 Volts N-CHANNEL POWER MOSFET

Unisonic Technologies 

50N06

„ ELECTRICAL CHARACTERISTICS(Cont.)

SWITCHING CHARACTERISTICS

Turn-On Delay Time

tD(ON)

Turn-On Rise Time

Turn-Off Delay Time

tR

tD(OFF)

VDD = 30V, ID =25 A,

RG = 50Ω (Note 1, 2)

Turn-Off Fall Time

tF

Total Gate Charge

Gate-Source Charge

Gate-Drain Charge

QG

QGS

VDS = 48V, VGS = 10 V

ID = 50A (Note 1, 2)

QGD

DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS

Drain-Source Diode Forward Voltage

VSD

IS = 50A, VGS = 0 V

Maximum Continuous Drain-Source Diode

Forward Current

IS

Maximum Pulsed Drain-Source Diode

Forward Current

ISM

Reverse Recovery Time

Reverse Recovery Charge

tRR

IS = 50A, VGS = 0 V

QRR

dIF / dt = 100 A/μs

Notes: 1. Pulse Test: Pulse Width≤300μs, Duty Cycle≤2%

2. Essentially independent of operating temperature

Power MOSFET

40 60 ns

100 200 ns

90 180 ns

80 160 ns

30 40 nC

9.6

nC

10

nC

1.5 V

50 A

200 A

54

ns

81

μC

UNISONIC TECHNOLOGIES CO., LTD

www.unisonic.com.tw

3 of 8

QW-R502-088.E

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