50N06G-TN3-R 查看數據表（PDF） - Unisonic Technologies
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50N06G-TN3-R Datasheet PDF : 8 Pages
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50N06
TYPICAL CHARACTERISTICS
Power MOSFET
On-Resistance Variation vs.
Drain Current and Gate Voltage
2.5
2.0
1.5
1.0
VGS=10V
0.5
VGS=20V
0.0
0 20 40 60 80 100 120140160180 200
Drain Current, ID (A)
On State Current vs.
Allowable Case Temperature
102
150°C
101
25°C
100
0.2
*Note:
1. VGS=0V
2. 250µs Test
0.4 0.6 0.8 1.0 1.2 1.4 1.6
Source-Drain Voltage, VSD (V)
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www.unisonic.com.tw
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