50RIA100S90 查看數據表（PDF） - Vishay Semiconductors
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50RIA100S90 Datasheet PDF : 7 Pages
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50RIA Series
Vishay High Power Products Medium Power Thyristors
(Stud Version), 50 A
1
Steady State Value
RthJ-hs = 0.35 K/W
0.1
50RIA Series
0.01
0.001
0.01
0.1
1
10
Square Wave Pulse Duration (s)
Fig. 8 - Thermal Impedance ZthJC Characteristics
100
Rectangular gate pulse
a) Recommended load line for
rated di/dt : 20V, 30 ohms; tr<=0.5 µs
b) Recommended load line for
<=30% rated di/dt : 20V, 65 ohms
10 tr<=1 µs
(b)
(a)
(1) PGM = 10W, tp = 5ms
(2) PGM = 20W, tp = 2.5ms
(3) PGM = 50W, tp = 1ms
(4) PGM = 100W, tp = 500µs
1
VGD
0.1
0.001
IGD
0.01
ORDERING INFORMATION TABLE
(1) (2) (3) (4)
50RIA Series Frequency Limited by PG(AV)
0.1
1
10
100
1000
Instantaneous Gate Current (A)
Fig. 9 - Gate Characteristics
Device code
50 RIA 120 S90 M
Dimensions
1
2
3
4
5
1 - Current code
2 - Essential part number
3 - Voltage code x 10 = VRRM (see Voltage Ratings table)
4 - Critical dV/dt:
None = 500 V/µs (standard value)
S90 = 1000 V/µs (special selection)
5-
None = Stud base TO-208AC (TO-65) 1/4" 28UNF-2A
M = Stud base TO-208AC (TO-65) M6 x 1
LINKS TO RELATED DOCUMENTS
http://www.vishay.com/doc?95334
www.vishay.com
6
For technical questions, contact: ind-modules@vishay.com
Document Number: 93711
Revision: 19-Sep-08
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