AM28F010A-70PEB 查看數據表（PDF） - Advanced Micro Devices

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AM28F010A-70PEB

1 megabit CMOS 12.0 volt, bulk erase flash memory with embedded algorithms

Advanced Micro Devices 

PIN DESCRIPTION

A0–A16

Address Inputs for memory locations. Internal latches

hold addresses during write cycles.

CE# (E#)

Chip Enable active low input activates the chip’s control

logic and input buffers. Chip Enable high will deselect

the device and operates the chip in stand-by mode.

DQ0–DQ7

Data Inputs during memory write cycles. Internal

latches hold data during write cycles. Data Outputs

during memory read cycles.

NC

No Connect—corresponding pin is not connected

internally to the die.

OE# (G#)

Output Enable active low input gates the outputs of the

device through the data buffers during memory read

cycles. Output Enable is high during command

sequencing and program/erase operations.

VCC

Power supply for device operation. (5.0 V ± 5% or 10%)

VPP

Program voltage input. VPP must be at high voltage in

order to write to the command register. The command

register controls all functions required to alter the mem-

ory array contents. Memory contents cannot be altered

when VPP ≤ VCC +2 V.

VSS

Ground

WE# (W#)

Write Enable active low input controls the write function

of the command register to the memory array. The tar-

get address is latched on the falling edge of the Write

Enable pulse and the appropriate data is latched on the

rising edge of the pulse. Write Enable high inhibits writ-

ing to the device.

Am28F010A

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