5962R9570801TXC 查看數據表（PDF） - Intersil

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产品描述 (功能)

生产厂家

5962R9570801TXC

Radiation Hardened 2K x 8 CMOS PROM

Intersil 

Die Characteristics

DIE DIMENSIONS:

(4166µm x 6350µm x 483µm ±25.4µm)

164 x 250 x 19mils ±1mil

METALLIZATION:

Type: Silicon - Aluminum

Thickness: 13.0kÅ ±2kÅ

SUBSTRATE POTENTIAL:

VDD

Metallization Mask Layout

HS-6617RH-T

BACKSIDE FINISH:

Silicon

PASSIVATION:

Type: Silox (SiO2)

Thickness: 8.0kÅ ±1kÅ

WORST CASE CURRENT DENSITY:

< 2.0e5 A/cm2

PROCESS:

SSAJIIV-RH

HS-6617RH-T

A2 (6)

(20) G

(19) A10

A1 (7)

A0 (8)

(18) E

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