6CWQ06FNTRLPBF 查看數據表（PDF） - Vishay Semiconductors

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产品描述 (功能)

生产厂家

6CWQ06FNTRLPBF

Schottky Rectifier, 2 x 3.5 A

Vishay Semiconductors 

6CWQ06FNPbF

Vishay High Power Products Schottky Rectifier, 2 x 3.5 A

ELECTRICAL SPECIFICATIONS

PARAMETER

SYMBOL

Maximum forward

voltage drop per leg

See fig. 1

VFM (1)

Maximum reverse

leakage current per leg

See fig. 2

IRM (1)

Threshold voltage

Forward slope resistance

Typical junction capacitance per leg

Typical series inductance per leg

Maximum voltage rate of change

VF(TO)

rt

CT

LS

dV/dt

Note

(1) Pulse width < 300 µs, duty cycle < 2 %

3A

6A

3A

6A

TJ = 25 °C

TJ = 125 °C

TEST CONDITIONS

TJ = 25 °C

TJ = 125 °C

VR = Rated VR

TJ = TJ maximum

VR = 5 VDC, (test signal range 100 kHz to 1 MHz) 25 °C

Measured lead to lead 5 mm from package body

Rated VR

VALUES

0.61

0.76

0.53

0.65

2

30

0.38

34.31

145

5.0

10 000

UNITS

V

mA

V

mΩ

pF

nH

V/µs

THERMAL - MECHANICAL SPECIFICATIONS

PARAMETER

SYMBOL

TEST CONDITIONS

Maximum junction and storage

temperature range

TJ (1), TStg

Maximum thermal resistance,

junction to case

per leg

per device

RthJC

DC operation

See fig. 4

Approximate weight

Marking device

Case style D-PAK (similar to TO-252AA)

Note

(1) d----P-----t-o---t < ------1-------- thermal runaway condition for a diode on its own heatsink

dTJ RthJA

VALUES

UNITS

- 40 to 150

°C

4.70

°C/W

2.35

0.3

g

0.01

oz.

6CWQ06FN

www.vishay.com

2

For technical questions, contact: diodes-tech@vishay.com

Document Number: 94249

Revision: 13-Aug-08

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