6TQ035STRR 查看數據表（PDF） - Vishay Semiconductors

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6TQ035STRR

Schottky Rectifier, 6 A

Vishay Semiconductors 

6TQ...S

Vishay High Power Products Schottky Rectifier, 6 A

ELECTRICAL SPECIFICATIONS

PARAMETER

SYMBOL

Maximum forward voltage drop

See fig. 1

VFM (1)

Maximum reverse leakage current

See fig. 2

Threshold voltage

Forward slope resistance

Maximum junction capacitance

Typical series inductance

Maximum voltage rate of change

Note

(1) Pulse width < 300 µs, duty cycle < 2 %

IRM (1)

VF(TO)

rt

CT

LS

dV/dt

6A

12 A

6A

12 A

TJ = 25 °C

TJ = 125 °C

TEST CONDITIONS

TJ = 25 °C

TJ = 125 °C

VR = Rated VR

TJ = TJ maximum

VR = 5 VDC (test signal range 100 kHz to 1 MHz) 25 °C

Measured lead to lead 5 mm from package body

Rated VR

VALUES

0.60

0.73

0.53

0.64

0.8

7

0.35

18.23

400

8.0

10 000

UNITS

V

mA

V

mΩ

pF

nH

V/µs

THERMAL - MECHANICAL SPECIFICATIONS

PARAMETER

SYMBOL

TEST CONDITIONS

Maximum junction and storage

temperature range

Maximum thermal resistance,

junction to case

TJ, TStg

RthJC

DC operation

See fig. 4

Typical thermal resistance,

case to heatsink

RthCS Mounting surface, smooth and greased

Approximate weight

Mounting torque

minimum

maximum

Marking device

Case style D2PAK

VALUES UNITS

- 55 to 175 °C

2.2

°C/W

0.50

2

g

0.07

oz.

6 (5)

12 (10)

kgf · cm

(lbf · in)

6TQ035S

6TQ040S

6TQ045S

www.vishay.com

2

For technical questions, contact: diodes-tech@vishay.com

Document Number: 93968

Revision: 27-Jun-08

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