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零件编号
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DG646BH25 查看數據表(PDF) - Dynex Semiconductor
零件编号
产品描述 (功能)
生产厂家
DG646BH25
Gate Turn-off Thyristor
Dynex Semiconductor
DG646BH25 Datasheet PDF : 19 Pages
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DG646BH25
2500
2000
Conditions:
T
j
= 25˚C,
C
S
= 2.0µF,
dI
GQ
/dt = 40A/µs
1500
1000
V
DRM
0.75x V
DRM
0.5x V
DRM
500
0
0
500
1000
1500
2000
2500
3000
On-state current I
T
- (A)
FIG 15 TURN OFF ENERGY ON STATE CURRENT
Fig.15 Turn-off energy vs on-state current
2500
2000
1500
1000
V
DRM
0.75x V
DRM
Conditions:
T
j
= 25˚C,
C
S
= 2.0µF,
I
T
= 2000A
0.5x V
DRM
10/19
500
20
30
40
50
60
70
Rate of rise of reverse gate current dI
GQ
/dt - (A/µs)
Fig.16 Turn-off energy vs rate of rise of reverse gate current
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