GS8322Z18B-133 查看數據表（PDF） - Giga Semiconductor

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GS8322Z18B-133

36Mb Pipelined and Flow Through Synchronous NBT SRAM

Giga Semiconductor 

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GS8322Z18(B/C)/GS8322Z36(B/C)/GS8322Z72(C)

The Byte Write Enable inputs (BA, BB, BC, and BD) determine which bytes will be written. All or none may be activated. A write

cycle with no Byte Write inputs active is a no-op cycle. The pipelined NBT SRAM provides double late write functionality,

matching the write command versus data pipeline length (2 cycles) to the read command versus data pipeline length (2 cycles). At

the first rising edge of clock, Enable, Write, Byte Write(s), and Address are registered. The Data In associated with that address is

required at the third rising edge of clock.

Flow Through Mode Read and Write Operations

Operation of the RAM in Flow Through mode is very similar to operations in Pipeline mode. Activation of a Read Cycle and the

use of the Burst Address Counter is identical. In Flow Through mode the device may begin driving out new data immediately after

new address are clocked into the RAM, rather than holding new data until the following (second) clock edge. Therefore, in Flow

Through mode the read pipeline is one cycle shorter than in Pipeline mode.

Write operations are initiated in the same way, but differ in that the write pipeline is one cycle shorter as well, preserving the ability

to turn the bus from reads to writes without inserting any dead cycles. While the pipelined NBT RAMs implement a double late

write protocol in Flow Through mode a single late write protocol mode is observed. Therefore, in Flow Through mode, address

and control are registered on the first rising edge of clock and data in is required at the data input pins at the second rising edge of

clock.

Rev: 1.00 10/2001

11/42

© 2001, Giga Semiconductor, Inc.

Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.

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