2N7086 查看數據表（PDF） - Semelab - > TT Electronics plc
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2N7086 Datasheet PDF : 2 Pages
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2N7086
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise stated)
Parameter
Test Conditions
STATIC ELECTRICAL RATINGS
BV(BR)DSS Drain–Source Breakdown Voltage VGS = 0
VGS(th)
Gate Threshold Voltage
VDS = VGS
IGSS
Gate – Body Leakage
VDS = 0
IDSS
Zero Gate Voltage Drain Current VDS = 160V
VGS = 0
ID(on)
On–State Drain Current1
VDS = 10V
RDS(on)
Static Drain – Source On–State
Resistance 1
VGS = 10V
ID = 8.5A
gfs
Forward Transconductance1
VDS = 15V
ID = 250µA
ID = 250µA
VGS = ±20V
TJ = 125°C
VGS = 10V
TJ = 125°C
IDS = 8.5A
DYNAMIC CHARACTERISTICS
Ciss
Coss
Crss
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge2
Gate Source Charge2
Gate Drain Charge2
Turn–On Delay Time2
Rise Time2
Turn–Off Delay Time2
Fall Time2
VGS = 0
VDS = 25V
f = 1MHz
VDS = 0.5 x V(BR)DSS
VGS = 10V
ID = 14A
VDD = 100V
VGEN =10V
RL = 7.1Ω
RG = 4.7Ω
ID = 14A
SOURCE – DRAIN DIODE CHARACTERISTICS
IS
Continuous Current
ISM
Pulse Current 3
VSD
Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
IF = IS
VGS = 0
IF = IS
dIF/dt = 100A/µs
1Pulse test : Pulse Width < 300µs ,Duty Cycle < 2%
2Independent of Operating Temperature
3Pulse width Limited by maximum Junction Temperature
THERMAL RESISTANCECHARACTERISTICS
RthJC
RthJA
RthCS
Parameter
Thermal resistance Junction-Case
Thermal resistance Junction-ambient
Thermal resistance Junction-ambient
Min. Typ. Max. Unit
200
V
2
4
V
±100 nA
25
µA
250
14
A
0.14
0.16
Ω
0.25
0.30
5.0
S
1550
500
pF
220
30
44
77
4.6
10
15
nC
13
26
35
10
30
60
100
ns
30
80
40
95
114
A
56
2.0
V
150
650 ns
0.5
µC
Min.
Typ.
1.0
Max. Unit
2.1
80 K/W
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. e-mail sales@semelab.co.uk
Website http://www.semelab.co.uk
Prelim. 1/99
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