74AHCT1G14GV,125 查看數據表（PDF） - NXP Semiconductors.
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74AHCT1G14GV,125 Datasheet PDF : 15 Pages
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NXP Semiconductors
74AHC1G14; 74AHCT1G14
Inverting Schmitt trigger
12. Dynamic characteristics
Table 9. Dynamic characteristics
GND = 0 V; tr = tf ≤ 3.0 ns. For waveform see Figure 5. For test circuit see Figure 6.
Symbol Parameter Conditions
25 °C
−40 °C to +85 °C −40 °C to +125 °C Unit
Min Typ Max Min Max
Min
Max
For type 74AHC1G14
tpd
propagation A to Y;
[1]
delay
VCC = 3.0 V to 3.6 V
[2]
CL = 15 pF
- 4.2 12.8 1.0
15.0
1.0
16.5 ns
CL = 50 pF
- 6.0 16.3 1.0
18.5
1.0
20.5 ns
VCC = 4.5 V to 5.5 V
[3]
CL = 15 pF
- 3.2 8.6 1.0
10.0
1.0
11.0 ns
CL = 50 pF
- 4.6 10.6 1.0
12.0
1.0
13.5 ns
CPD
power
per buffer;
[4] -
12
-
-
-
-
-
pF
dissipation CL = 50 pF; f = 1 MHz;
capacitance VI = GND to VCC
For type 74AHCT1G14
tpd
propagation A to Y;
[1]
delay
VCC = 4.5 V to 5.5 V
[3]
CL = 15 pF
- 4.1 7.0 1.0
8.0
1.0
9.0 ns
CL = 50 pF
CPD
power
per buffer;
dissipation VI = GND to VCC
capacitance
- 5.9 8.5 1.0
10.0
1.0
11.0 ns
[4] -
13
-
-
-
-
-
pF
[1] tpd is the same as tPLH and tPHL.
[2] Typical values are measured at VCC = 3.3 V.
[3] Typical values are measured at VCC = 5.0 V.
[4] CPD is used to determine the dynamic power dissipation PD (µW).
PD = CPD × VCC2 × fi + ∑(CL × VCC2 × fo) where:
fi = input frequency in MHz;
fo = output frequency in MHz;
CL = output load capacitance in pF;
VCC = supply voltage in Volts.
74AHC_AHCT1G14_6
Product data sheet
Rev. 06 — 18 May 2009
© NXP B.V. 2009. All rights reserved.
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