74AHCT1G32GV 查看數據表（PDF） - NXP Semiconductors.

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74AHCT1G32GV

2-input OR gate

NXP Semiconductors. 

NXP Semiconductors

74AHC1G32; 74AHCT1G32

2-input OR gate

Table 8. Dynamic characteristics …continued

GND = 0 V; tr = tf = ≤ 3.0 ns. For waveform see Figure 5. For test circuit see Figure 6.

Symbol Parameter Conditions

25 °C

−40 °C to +85 °C −40 °C to +125 °C Unit

Min Typ Max Min Max

Min

Max

For type 74AHCT1G32

tpd

propagation A and B to Y;

delay

see Figure 5;

VCC = 4.5 V to 5.5 V

CL = 15 pF

[1]

[3]

-

3.3 6.9 1.0 8.0

1.0

9.0

ns

CL = 50 pF

-

4.8 7.9 1.0 9.0

1.0

10

ns

CPD

power

per buffer;

[4] -

17 -

-

-

-

-

pF

dissipation CL = 50 pF; f = 1 MHz;

capacitance VI = GND to VCC

[1] tpd is the same as tPLH and tPHL.

[2] Typical values are measured at VCC = 3.3 V.

[3] Typical values are measured at VCC = 5.0 V.

[4] CPD is used to determine the dynamic power dissipation PD (µW).

PD = CPD × VCC2 × fi + ∑ (CL × VCC2 × fo) where:

fi = input frequency in MHz;

fo = output frequency in MHz;

CL = output load capacitance in pF;

VCC = supply voltage in Volts.

12. Waveforms

A, B input

Y output

VM

tPHL

VM

Measurement points are given in Table 9.

Fig 5. The input (A and B) to output (Y) propagation delays

Table 9. Measurement points

Type number

Input

74AHC1G32

74AHCT1G32

VI

GND to VCC

GND to 3.0 V

VM

0.5 × VCC

1.5 V

tPLH

mna167

Output

VM

0.5 × VCC

0.5 × VCC

74AHC_AHCT1G32_7

Product data sheet

Rev. 07 — 14 May 2009

© NXP B.V. 2009. All rights reserved.

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