74AHCT1G66GV 查看數據表（PDF） - NXP Semiconductors.
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74AHCT1G66GV Datasheet PDF : 17 Pages
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NXP Semiconductors
74AHC1G66; 74AHCT1G66
Single-pole single-throw analog switch
Table 9. Dynamic characteristics …continued
Voltages are referenced to GND (ground = 0 V); CL = 50 pF; unless otherwise specified; For test circuit see Figure 10.
Symbol Parameter
Conditions
25 °C
−40 °C to +85 °C −40 °C to +125 °C Unit
Typ[1] max
Max
Max
CPD
power
VI = GND to VCC
dissipation
capacitance
[3] 15
-
-
-
pF
[1] All typical values are measured at VCC = 2.0 V, VCC = 3.3 V, VCC = 5.0 V and Tamb = 25 °C.
[2] tpd is the same as tPLH and tPHL.
ten is the same as tPZL and tPZH.
tdis is the same as tPLZ and tPHZ.
[3] CPD is used to determine the dynamic power dissipation PD (µW).
PD = CPD × VCC2 × fi + Σ ((CL × CSW) × VCC2 × fo) where:
fi = input frequency in MHz;
fo = output frequency in MHz;
CL = output load capacitance in pF;
CSW = maximum switch capacitance in pF (see Table 7);
VCC = supply voltage in Volt;
Σ ((CL × CSW) × VCC2 × fo) = sum of outputs.
11.1 Waveforms and test circuit
VI
Y or Z input
GND
VOH
Z or Y output
VOL
VM
t PLH
VM
t PHL
mna667
Fig 8.
Measurement points are given in Table 10.
Logic levels: VOL and VOH are typical output voltage levels that occur with the output load.
Input (Y or Z) to output (Z or Y) propagation delays
74AHC_AHCT1G66_4
Product data sheet
Rev. 04 — 18 December 2008
© NXP B.V. 2008. All rights reserved.
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