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74AHCT3G14GD Datasheet PDF : 16 Pages
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NXP Semiconductors
74AHC3G14; 74AHCT3G14
Inverting Schmitt trigger
11.1 Transfer characteristics
Table 8. Transfer characteristics
At recommended operating conditions; voltages are referenced to GND (ground = 0 V). See Figure 8 and Figure 9.
Symbol Parameter
Conditions
25 °C
−40 °C to +85 °C −40 °C to +125 °C Unit
Min Typ Max Min Max
Min
Max
74AHC3G14
VT+
positive-going
threshold
voltage
VT−
negative-going
threshold
voltage
VH
hysteresis
voltage
74AHCT3G14
VCC = 3.0 V
VCC = 4.5 V
VCC = 5.5 V
VCC = 3.0 V
VCC = 4.5 V
VCC = 5.5 V
VCC = 3.0 V
VCC = 4.5 V
VCC = 5.5 V
-
- 2.2
-
2.2
-
2.2 V
-
- 3.15 -
3.15
-
3.15 V
-
- 3.85 -
3.85
-
3.85 V
0.9 -
-
0.9
-
0.9
-
V
1.35 -
- 1.35
-
1.35
-
V
1.65 -
- 1.65
-
1.65
-
V
0.3 - 1.2 0.3
1.2
0.25
1.2 V
0.4 - 1.4 0.4
1.4
0.35
1.4 V
0.5 - 1.6 0.5
1.6
0.45
1.6 V
VT+
positive-going VCC = 4.5 V
threshold
voltage
VCC = 5.5 V
-
- 2.0
-
2.0
-
2.0 V
-
- 2.0
-
2.0
-
2.0 V
VT−
negative-going VCC = 4.5 V
threshold
voltage
VCC = 5.5 V
0.5 -
-
0.5
-
0.5
-
V
0.6 -
-
0.6
-
0.6
-
V
VH
hysteresis
voltage
VCC = 4.5 V
VCC = 5.5 V
0.4 - 1.4 0.4
1.4
0.35
1.4 V
0.4 - 1.6 0.4
1.6
0.35
1.6 V
12. Dynamic characteristics
Table 9. Dynamic characteristics
GND = 0 V; tr = tf ≤ 3.0 ns; for test circuit see Figure 7.
Symbol Parameter Conditions
25 °C
−40 °C to +85 °C −40 °C to +125 °C Unit
Min Typ Max Min Max
Min
Max
74AHC3G14
tpd
propagation nA to nY; see Figure 6
[1]
delay
VCC = 3.0 V to 3.6 V
[2]
CL = 15 pF
- 4.2 12.8 1.0
15.0
1.0
16.5 ns
CL = 50 pF
- 6.0 16.3 1.0
18.5
1.0
20.5 ns
VCC = 4.5 V to 5.5 V
[3]
CL = 15 pF
- 3.2 8.6 1.0
10.0
1.0
11.0 ns
CL = 50 pF
- 4.6 10.6 1.0
12.0
1.0
13.5 ns
CPD
power
per buffer;
[4] -
10
-
-
-
-
-
pF
dissipation CL = 50 pF; fi = 1 MHz;
capacitance VI = GND to VCC
74AHC_AHCT3G14_4
Product data sheet
Rev. 04 — 5 May 2009
© NXP B.V. 2009. All rights reserved.
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